Product Summary
The IRF3205 is a Power MOSFET. It utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF3205 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF3205 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 110A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 80 A; (3)IDM ,Pulsed Drain Current: 390A; (4)PD @TC = 25℃, Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 62 A; (8)EAR, Repetitive Avalanche Energy: 20 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).
Features
IRF3205 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF3205 |
International Rectifier |
MOSFET N-CH 55V 110A TO-220AB |
Data Sheet |
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IRF3205L |
MOSFET N-CH 55V 110A TO-262 |
Data Sheet |
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IRF3205SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF3205PBF |
International Rectifier |
MOSFET MOSFT 55V 98A 8mOhm 97.3nC |
Data Sheet |
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IRF3205LPBF |
International Rectifier |
MOSFET MOSFT 55V 110A 8mOhm 97.3nC |
Data Sheet |
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IRF3205S |
International Rectifier |
MOSFET N-CH 55V 110A D2PAK |
Data Sheet |
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IRF3205ZPBF |
International Rectifier |
MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg |
Data Sheet |
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IRF3205STRLPBF |
International Rectifier |
MOSFET MOSFT 55V 110A 8mOhm 97.3nC |
Data Sheet |
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