(China (Mainland))
Product Summary
The GT60M301 is a silicon n channel igbt.
Parametrics
GT60M301 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600 V; (2)Gate-emitter voltage VGES : 25 V; (3)Emitter-collector forward DC IECF 60 current: 60A; (4)Collector power dissipation(Tc 25°C): 200 W; (5)Junction temperature : 150 °C; (6)Storage temperature range: -55~150 °C.
Features
GT60M301 features: (1)Enhancement-mode; (2)High speed: tf = 0.30 μs (typ.) (IC = 60 A); (3)Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A).
Diagrams
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 GT60M303(Q) |
Toshiba |
IGBT Transistors 900V/60A DIS+FRD Trench |
Data Sheet |
Negotiable |
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GT60M323(Q) |
Toshiba |
IGBT Transistors IGBT, 900V, 60A |
Data Sheet |
Negotiable |
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GT60N321(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 60A |
Data Sheet |
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GT60N322(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 57A |
Data Sheet |
Negotiable |
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GT60N322 |
Other |
|
Data Sheet |
Negotiable |
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GT60N321 |
Other |
|
Data Sheet |
Negotiable |
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