(China (Mainland))
Product Summary
The IRF540N is a HEXFET power MOSFET. The IRF540N advanced HEXFET power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRF540N, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF540N absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ± 20 V; (2)IAR Avalanche Current: 16 A; (3)EAR Repetitive Avalanche Energy: 13 mJ; (4)dv/dt Peak Diode Recovery dv/dt: 7.0 V/ns; (5)TJ Operating Junction and -55 to + 175℃; (6)TSTG Storage Temperature Range: -55 to + 175℃.
Features
IRF540N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF540N |
International Rectifier |
MOSFET N-CH 100V 33A TO-220AB |
Data Sheet |
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IRF540N_R4942 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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IRF540NPBF |
International Rectifier |
MOSFET MOSFT 100V 33A 44mOhm 47.3nC |
Data Sheet |
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IRF540NLPBF |
International Rectifier |
MOSFET MOSFT 100V 33A 44mOhm 47.3nC |
Data Sheet |
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IRF540NL |
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MOSFET N-CH 100V 33A TO-262 |
Data Sheet |
Negotiable |
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IRF540NS |
International Rectifier |
MOSFET N-CH 100V 33A D2PAK |
Data Sheet |
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IRF540NSPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF540NSTRLPBF |
International Rectifier |
MOSFET MOSFT 100V 33A 44mOhm 47.3nC |
Data Sheet |
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