IRF540N

TO-220, HEXFET power MOSFET, Low On-Resistance, Fast Switching, 20 V, 16 A

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Price:: US $0.35~0.40 / piece [Get Latest Price]

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	US $0.35~0.40

PartNumber:: IRF540N

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-11-08

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Part Number:IRF540N
US $0.35 - 0.40
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Product Summary

The IRF540N is a HEXFET power MOSFET. The IRF540N advanced HEXFET power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of the IRF540N, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF540N absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ± 20 V; (2)IAR Avalanche Current: 16 A; (3)EAR Repetitive Avalanche Energy: 13 mJ; (4)dv/dt Peak Diode Recovery dv/dt: 7.0 V/ns; (5)TJ Operating Junction and -55 to + 175℃; (6)TSTG Storage Temperature Range: -55 to + 175℃.

Features

IRF540N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.