(China (Mainland))
Product Summary
The BU508 is a high voltage fast-switching NPN power transistor. The BU508 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
Parametrics
BU508 absolute maximum ratings: (1)Collector-Emitter Voltage (VBE = 0): 1500 V; (2)Collector-Emitter Voltage (IB = 0): 700 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 8 A; (5)Collector Peak Current (tp < 5 ms): 15 A; (6)Total Dissipation at Tc = 25 ℃: 125 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.
Features
BU508 features: (1)STMicroelectronics preferred salestypes; (2)high voltage capability (> 1500 V); (3)fully insulated package (U.L. compliant) for easy mounting.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BU508F |
Other |
|
Data Sheet |
Negotiable |
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BU508DX |
Other |
|
Data Sheet |
Negotiable |
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BU508DW |
Other |
|
Data Sheet |
Negotiable |
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BU508DF |
Other |
|
Data Sheet |
Negotiable |
|
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BU508D |
Other |
|
Data Sheet |
Negotiable |
|
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BU508AX |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BU508AW |
STMicroelectronics |
Transistors Bipolar (BJT) Hi Vltg NPN Pwr transistor |
Data Sheet |
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BU508AFTBTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon |
Data Sheet |
Negotiable |
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